EMN Meeting on Epitaxy

EMN Vienna Meeting          Workshops          Important Dates          Program          Accommodation

Please contact the conference assistant at:  emn-epitaxy@outlook.com (Miss Holly Wang)

To continue its success of last events at Budapest, Hungary 2016 and Barcelona, Spain 2017, The EMN Meeting on Epitaxy 2018 will be held from June 18 to 22, 2018 at ARCOTEL Wimberger Vienna Hotel in Vienna, Austria.


  • Molecular Beam Epitaxy
  • Metal-organic Chemical Vapor Deposition (Basic MOCVD research and Devices grown by MOCVD)
  • Atomic Layer Deposition
  • Epitaxial Growth
  • 2D Semiconducting Materials
  • Epitaxy Nanomaterials
  • Other Topics Related to Epitaxy


Speakers at a Glance:


Mehdi Anwar, University of Connecticut, USA
Memristors: Materials, Devices and Systems (2017)

Jordi Arbiol, ICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Catalonia (Spain)
Epitaxy at the atomic scale: from core-shell to axial heterojunctions in nanostructures


Haim Beidenkopf, Weizmann Institute of Science, Israel
To be announced

Alexei Bouravleuv, St.Petersburg Academic University RAS, Russia
Au nanoparticle assisted MBE growth and thermal annealing of GaAs nanowires

Michel Cassir, Institut de Recherche de Chimie Paris, CNRS, Chimie ParisTech (PSL), ENSCP, France
Textured and epitaxial ceria-based layers for solid oxide fuel cell applications

Zhao-hua Cheng, Institute of Physics, CAS, China
To be announced

Sang H. Choi, NASA Langley Research Center, USA
To be announced

George Cirlin, Institute for Analytical Instrumentation RAS, Russia
MBE growth and properties of A3B5 nanowires on silicon

Ayman M. Darwish, National Research Center, Egypt
Synthetic of pure metal oxide nano-materials via green laser ablation method

Rachid Driad, Fraunhofer IAF, Germany
Selective area growth of III-V based materials

Kazuyuki Edamoto, Rikkyo University, Japan
Electronic structures of vanadium oxide ultrathin films epitaxially grown on Ag(100)

Kadir Ejderha, Bingol University, Turkey
To be announced

Guy Feuillet, CEA/LETI, France
To be announced

Tohru Higuchi, Tokyo University of Science, Japan
Growth of Vanadium Oxide Thin Film by RF Magnetron Sputtering Using Oxygen Radical

Ching-Lien Hsiao, Linköping University, Sweden
Multicomponent InAlN nanostructures grown by magnetron sputter epitaxy

Stacia Keller, University of California Santa Barbara, USA
Metal Organic Chemical Vapor Deposition of High Quality N-polar (Al,Ga,In)N films

Masahiko Kondow, Osaka University, Japan
To be announced

Hu Liang, IMEC, Belgium
GaN/AlGaN e-mode HEMT growth on 650V buffer by MOVPE for power electronics applications

Akos Nemcsics, Obuda University, Hungary
Some aspects to the droplet epitaxially nano structure growth (2017)

Dinesh Pandya, Indian Institute of Technology Delhi, India
Physical and Chemical Epitaxy of 2D and QD Semiconductor Materials for various applications

Samit K. Ray, IIT Kharagpur, India
To be announced

Gilles Renaud, CEA-Grenoble, INAC/MEM/NRS, France
Epitaxy of nanomaterials and 2D materials by MBE and CVD, as probed in situ by synchrotron X-ray scattering

Antonio Terrasi, University of Catania, Italy
To be announced

Piero Torelli, Laboratorio TASC, CNR-IOM, Italy
Magnetoelectric coupling in epitaxial ferromagnetic/ferroelectric interfaces


Previous Epitaxy conference pictures: