EMN Meeting on Epitaxy

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Please contact conference assistant at:  emn-epitaxy@outlook.com or epitaxy@emnmeeting.org (Miss Holly Wang)


To continue its success of last events at Budapest, Hungary 2016 and Barcelona, Spain 2017, The EMN Meeting on Epitaxy 2018 will be held from June 18 to 22, 2018 at ARCOTEL Wimberger Vienna Hotel in Vienna, Austria.



  • Molecular Beam Epitaxy
  • Metal-organic Chemical Vapor Deposition (Basic MOCVD research and Devices grown by MOCVD)
  • Atomic Layer Deposition
  • Epitaxial Growth
  • 2D Semiconducting Materials
  • Epitaxy Nanomaterials
  • Other Topics Related to Epitaxy


Speakers at a Glance:


  • Mehdi Anwar, University of Connecticut, USA
    Memristors: Materials, Devices and Systems (2017)
  • Jordi Arbiol, ICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Catalonia (Spain)
    Epitaxy at the atomic scale: from core-shell to axial heterojunctions in nanostructures
  • Sang H. Choi, NASA Langley Research Center, USA
    Rhombohedral Super-Hetero-Epitaxy Technology
  • Dao Hua Zhang, Nanyang Technological University, Singapore
    Epitaxial antimonides and their application for photodetection



  • Elaheh Ahmadi, University of Michigan, USA
    Molecular beam epitaxy of beta-Ga2O3 and (AlGa)2O3
  • Stéphane Andrieu, Lorraine University, CNRS, France
    Promising materials for spintronics : Co2MnX (X=Si, Ge, Ga, Al, Sn) Heusler compounds as Half-Metal Magnet grown by Molecular Beam Epitaxy
  • Seung-Hyub Baek, Korea Institute of Science and Technology, Korea
    Epitaxial multifunctional oxide thin films
  • Michel Boudard, LMGP, Univ. Grenoble Alpes, CNRS, France 
    Cobatilte epitaxial thin films for ReRAM applications
  • Alexei Bouravleuv, St.Petersburg Academic University RAS, Russia
    Au nanoparticle assisted MBE growth and thermal annealing of GaAs nanowires
  • Michel Cassir, Institut de Recherche de Chimie Paris, CNRS, Chimie ParisTech (PSL), ENSCP, France
    Textured and epitaxial ceria-based layers for solid oxide fuel cell applications
  • Zhao-hua Cheng, Institute of Physics, CAS, China
    To be announced
  • Cristina Chirila, National Institute of Materials Physics, Romania
    To be announced
  • George Cirlin, Institute for Analytical Instrumentation RAS, Russia
    MBE growth and properties of A3B5 nanowires on silicon
  • Gui-Ping Dai, North Carolina Central University, USA
    To be announced
  • Ayman M. Darwish, National Research Center, Egypt
    Synthetic of pure metal oxide nano-materials via green laser ablation method
  • Rachid Driad, Fraunhofer IAF, Germany
    Selective area growth of III-V based materials
  • Kazuyuki Edamoto, Rikkyo University, Japan
    Electronic structures of vanadium oxide ultrathin films epitaxially grown on Ag(100)
  • Guy Feuillet, CEA/LETI, France
    To be announced
  • Yoshihisa Fujisaki, YourFriend, Japan
    Conformal deposition of ultra-thin calcogenide GeSbTe films by MOCVD method
  • Hirokazu Fujiwara, Okayama University, Japan
    Intrinsic electronic structure of high-quality CrO2 epitaxial film prepared by a closed-system CVD method
  • Alberto Herrera Gómez, CINVESTAV-Unidad Querétaro, México
    Detailed characterization of ALD-nanofilms through ARXPS
  • Syed Farhan Hasany, NED UET Karachi, Pakistan
    Metal Oxide
  • Tohru Higuchi, Tokyo University of Science, Japan
    Growth of Vanadium Oxide Thin Film by RF Magnetron Sputtering Using Oxygen Radical
  • Ching-Lien Hsiao, Linköping University, Sweden
    Multicomponent InAlN nanostructures grown by magnetron sputter epitaxy
  • Periyanayagam Gandhi Kallarasan and Kazuhiko Shimomura, Sophia University, Japan
    MOVPE growth of GaInAsP system on directly bonded InP/Si substrate
  • Teruo Kanki, Osaka University, Japan
    To be announced
  • Salim El Kazzi, IMEC, Belgium
    Van der Walls Epitaxy of 2D-MX2 materials for beyond CMOS integration
  • Stacia Keller, University of California Santa Barbara, USA
    Metal Organic Chemical Vapor Deposition of High Quality N-polar (Al,Ga,In)N films
  • Masahiko Kondow, Osaka University, Japan
    Suitable quality (Q) factor for photonic crystal laser grown by MBE
  • Hu Liang, IMEC, Belgium
    GaN/AlGaN e-mode HEMT growth on 650V buffer by MOVPE for power electronics applications
  • Zhiqi Liu, Beihang Unviersity, China
    Manipulating magnetic phases of epitaxial intermetallic alloys with electric fields
  • Atsutaka Maeda, University of Tokyo, Japan
    Synthesis and physical property investigation of FeSe1-xTex and FeSe1-xSx epitaxial thin films
  • Chaker Mohamed, INRS-EMT, Canada
    Epitaxial growth of metal-insulator transition materials
  • Richard Moug, Heriot Watt University, UK
    Advances in II-VI Epitaxial lift-off and novel structure fabrication
  • Franck Natali, Victoria University of Wellington, New Zealand
    To be announced
  • Akos Nemcsics, Obuda University, Hungary
    Some aspects to the droplet epitaxially nano structure growth (2017)
  • Dinesh Pandya, Indian Institute of Technology Delhi, India
    Physical and Chemical Epitaxy of 2D and QD Semiconductor Materials for various applications
  • José A. Pardo, University of Zaragoza, Spain
    Epitaxial strain engineering in alkaline-earth manganites
  • Edyta Piskorska-Hommel, Polish Academy of Sciences, Poland
    To be announced
  • Samit K. Ray, IIT Kharagpur, India
    To be announced
  • Gilles Renaud, CEA-Grenoble, INAC/MEM/NRS, France
    Epitaxy of nanomaterials and 2D materials by MBE and CVD, as probed in situ by synchrotron X-ray scattering
  • Krista Roluahpuia, IIT Mumbai, India
    Fabrication of wafer-scale-all-epitaxial GeSn on insulator
  • Jutta Schwarzkopf, Leibniz Institute for Crystal Growth, Germany
    Epitaxy of ferroelectric KxNa1-xNbO3 thin films for strain engineering
  • Preeti V. Shah, Solid State Physics Laboratory, India
    To be announced
  • Nataliya Shwartz, A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Russia
    Metal droplets behavior during high-temperature annealing of AIIIBV semiconductors and  nanostructure formation
  • Laurent Simon, Institut des Sciences de Matériaux de Mulhouse, CNRS, France
    Functionalization of epitaxial graphene by intercalation
  • Algirdas Sužiedėlis, Center for Physical Sciences and Technology, Lithuania
    Selectively doped 2D semiconducting structures for microwave electronics
  • Antonio Terrasi, University of Catania, Italy
    To be announced
  • Tetyana Torchynska, ESFM-National Polytechnic Institute, Mexico
    Emission and HR-XRD study in MBE grown multi hetero-structures with InAs quantum dots and AlGaInAs strain reduced layers for optoelectronics applications
  • Piero Torelli, Laboratorio TASC, CNR-IOM, Italy
    Magnetoelectric coupling in epitaxial ferromagnetic/ferroelectric interfaces
  • Pu-Lin Yeh, St. John’s University, Taiwan
    To be announced
  • Hong Yin, Jilin University, China
    Heteroepitaxial growth of cubic boron nitride thin films
  • M. Yoshikawa, Toray Research Center, Inc., Japan
    Characterization of Inhomogeneity in Thermal Oxide Films on 4H-SiC Epitaxial Substrates by a Combination of Infrared, Raman and Cathodoluminescence Spectroscopy
  • Milad Yousefi, Universidade Federal do Rio Grande do Sul – UFRGS, Brazil
    To be announced
  • Jörg Zegenhagen, Diamond Light Source Ltd, UK
    In Situ X-ray Study of Epitaxy in Aqueous Electrolytes
  • Guohe Zhang, Xi’an Jiaotong University, China
    Design and fabrication of MEMS Pirani gauge utilizing the process compatible with CMOS technology
  • Yongchun Zhao, Huazhong University of Science and Technology, China
    CO2 Photocatalytic Reduction over TiO2 Nanocrystals with Specific Facet



  • Georgiy Polupan, ESIME- National Polytechnic Institute, Mexico
    Thermal impact on emission and structure of MBE GaAs/AlGaAs heterostructures with InAs quantum dots


Previous Epitaxy conference pictures: