EMN Epitaxy 2019

Welcome to EMN Epitaxy 2019 Amsterdam !



About Epitaxy 2019


To continue its success of last events at Budapest, Hungary (2016), Barcelona, Spain (2017) and Vienna, Austria (2018), the EMN Meeting on Epitaxy 2019 will be held from June 17 to 21, 2019 at Holiday Inn Amsterdam – Arena Towers in Amsterdam, the Netherlands. 

The paramount EMN Epitaxy 2019 will bring an opportunity for leading academic scientists, researchers and decision makers in the field of Epitaxy to get their latest discoveries acknowledged on the global arena, which will include topics of MBE, MOCVD, Atomic Layer Deposition, III-V Semiconductors, II-VI IV-VI IV Semiconductors and Oxides, Heterogeneous Epitaxy, 2D Materials, Superconductivity and Topological Insulator Materials, Photodetection and other epitaxy related topics.

It will continue for four days will take you to the voyage of knowledge providing you an opportunity to both collaborations and learn about the most recent innovations, trends, and concerns, practical challenges encountered and the solutions adopted in this broad field of epitaxy technology from all over the world, with emphasis on both the basic science as well as its applications in industry and academia. 

Amsterdam, the capital of the Netherlands, is the country’s largest city and its financial, cultural, and creative center. Amsterdam derives its name from the city’s origin as “Dam” of river “Amstel”, it’s also the site of the present dam square. Amsterdam is colloquially known as Venice of the North because of its lovely canals that criss-cross the city, its impressive architecture and more than 1,500 bridges, there is something for every traveller’s taste here; whether you prefer culture and history, or just the relaxing charm of an old European city. Many famous attraction you can find here as a microcosm of the history of the Netherlands, including the long-standing canal network, the Dutch National Museum, the Van Gogh Museum, Anne’s House, etc. The meeting will be a few days of intense collaboration with great social occasions. 

We are looking forward to having the pleasure welcoming you to the EMN Epitaxy 2019 Amsterdam!



Workshops & Attendees                             Call for Abstracts


Invited  (sort by workshops)

2D Materials

  • Piotr Caban, Institute of Electronic Materials Technology, Poland
    Growth of Boron Nitride layers by MOVPE
  • Ali Ghaffarinejad, Iran University of Science and Technology (IUST), Iran
    Advanced film deposition techniques employed in Electrostatic Kinetic Energy harvesters (eKEH)
  • Aleksandar Matkovic, Institute of Physics, University of Leoben, Austria
    Van der Waals epitaxy and self-assembly of organic nanostructures on 2D materials
  • Andrzej Patrykiejew, MCS University Lublin, Poland
    Commensurate and Incommensurate phases in monolayer films
  • Yizhak Yacoby, The Hebrew University, Israel 
    Atomic structure determination of epitaxially grown thin films and quantum dots using the Coherent Bragg Rod Analysis (COBRA) method
  • Yong Zhang, The University of North Carolina at Charlotte, USA
    Growth and characterization of stable ultra-thin Si film on graphene substrate

Heterogeneous Epitaxy

  • Jordi Arbiol, ICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Catalonia, Spain
    Keynote: Epitaxy at the atomic scale: from core-shell to axial heterojunctions in nanostructures
  • Sukarno Ferreira, Universidade Federal de Viçosa, Brazil
    Highly mismatched CdMnTe/Si heterostructures grown by molecular beam epitaxy
  • Corneliu Ghica, National Institute of Materials Physics, Romania
    Strain driven defects in epitaxial thin films: HRTEM quantification and nanoscale mapping
  • David Halley, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), France
    Appearance of magnetic and magneto-electric properties in highly strained epitaxial clusters of Cr203 and VO2 in a MgO matrix
  • Suseendran Jayachandran, IMEC, Belgium
    Si epitaxy with O inter-layers
  • Patrick Vogt, Helmholtz-Zentrum Berlin, Germany
    Metal-oxide catalyzed epitaxy (MOCATAXY): A novel path towards high-quality binary and ternary III-O heterostructures

III-V Semiconductors, MOCVD, MBE

  • Chernet Amente, Addis Ababa University, Ethiopia
    The study of magnetism in diluted magnetic semiconductors employing the Green function technique
  • Saud Bin Anooz, Leibniz Institute for Crystal Growth (IKZ), Germany
    High-quality, homoepitaxial β-Ga2O3 (100) grown by MOVPE
  • Mikhail Chernov, Laboratory of Quantum-size Heterostructures, Ioffe Institute, Russia
    Metamorphic InAs(Sb)/InGaAs/InAlAs heterostructures grown by MBE on GaAs: toward mid-IR lasing
  • Jan J. Dubowski, Université de Sherbrooke, Canada
    Fabrication of Stoichiometric surfaces of GaAs and AlGaAs
  • Ewa Dumiszewska, Institute of Electronic Materials Technology, Poland
    III-V nanowires grown on various substrates by MOCVD
  • Evelyne Gil, Institut Pascal, UCA/CNRS/SIGMA Clermont, Université Clermont Auvergne, France
    Shaping 3D (nano)structures: back to basics of crystallogenesis – Strengths and weaknesses of CVD/VPE and MBE
  • Chirag Gupta, University of California Santa Barbara, USA
    Expansion of vertical III-Nitrides (GaN) device design space by MOCVD regrowth
  • Soon-Ku Hong, Chungnam National University, Korea
    Growth and Characterization of Ultra-Wide Bandgap Gallium Oxide for Power Semiconductors by MBE
  • Muhammad Khan, RIKEN, Japan
    AlGaN Based UV-B LEDs Current Challenges and Future Directions
  • Ayad Fadhil Omar, University of Malaya, Malaysia
    Crystal Quality Enhancement of Semi-Polar (11-22) InGaN/GaN-based LED Grown on M-Plane Sapphire Substrate via MOCVD
  • Mariusz Rudziński, Institute of Electronic Materials Technology, Poland
    3D hexagonal micro-columns based on III-N grown by MOCVD
  • Patrik Scajev, Vilnius University, Lithuania
    MOCVD growth of InGaN structures on different substrates
    Mid-infrared sensor using MBE-grown Sb-based compound semiconductor


  • Kacper Grodecki, Military University of Technology, Poland
    Optical characterisation of InAsSb includding Raman, photoluminescence and absorption techniques
  • Junyou Yang, Huazhong University of Science and Technology, China
    Electrochemical Atomic Layer Deposition of Compound Semiconductors for Photovoltaics
  • Maria Zamoryanskaya, Ioffe Physical-Technical Institute, Russian Academy of Sciences, Russia
    Cathodoluminescence of nanoheterostructures: determination of geometrical parameters of nanoscale layers, evaluation of the transport properties of structures, the effect of traps on the luminescent properties
  • Dao Hua Zhang, Nanyang Technological University, Singapore
    Keynote: Epitaxial antimonides and enhanced photodetection
  • Emil Zolotoyabko, Technion-Israel Institute of Technology, Israel
    Atomic intermixing in short-period superlattices for infrared detection

Superconductivity and Topological Insulator Materials

  • Pintilie Lucian, National Institute of Materials Physics, Romania
    New functionalities and findings in epitaxial ferroelectric structures

Epitaxy General

  • Ezekiel A. Anyebe, Lancaster University, UK 
  • Ayman M. Darwish, Physics Dvision, National Research Center, Egypt
  • Zhongyun Fan, BCAST, Brunel University, UK
  • Jan Grym, Institute of Photonics and Electronics of the CAS, Czech Republic
    Solution Growth of ZnO Nanorods on Patterned Substrates in Continuous-Flow Reactors
  • Masayoshi Ichimiya, The University of Shiga Prefecture, Japan
  • Masaaki Kuzuhara, University of Fukui, Japan
  • Prakash Pareek, Vaagdevi Engineering College, India
    Modeling and design of Tin doped Group IV based quantum well optoelectronics device
  • Adele Sassella, University of Milano Bicocca, Italy
    Organic epitaxy: concepts and examples
  • Dawei Shen, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China


Poster (sort by last name)

  • M. Benlattar, Hassan II University of Casablanca, Morocco
    Study of upward and downward hetero-diffusions of Au epitaxy on stepped Ag (110) surface



Meeting Venue & Accommodation

Holiday Inn Amsterdam – Arena Towers
Hoogoorddreef 66, 1101 BE Amsterdam The Netherlands
T: +31 (0)20 820 2440
E: info.amsaa@hiex.nl

We strongly encourage you stay at Holiday Inn Amsterdam – Arena Towers, which also serve as the assembly point of our activities.


* Taxi: Departs in front of the airport arrival/departure halls 30 to 40 minutes €50;
* Bus/Shuttle: Not applicable;
* Train: Departs directly from the airport.15 minute direct connection €4,00 per person– strongly recommend



General Information



The registration and payment gateway shall be available in April, and detailed information can be found by clicking the “Register for Epitaxy” button on the top.

Abstract Submission

Email notification of contributed presentation acceptance is to be provided two months before the meeting, and more details can be found by clicking the “Submit Abstract” button on the top.

The abstract template is available here:  EMN_abstract_template

Please directly submit your abstract as an email attachment to emn-epitaxy@outlook.com

Program at a Glance

On Site Registration Starts: 14:00 PM, June 17, 2019
Scientific Program: June 18/19/20, 2019
One-Day Excursion: Nature, Culture, and Collaboration: June 21, 2019

Main Contact

emn-epitaxy@outlook.com (Holly Wang)



Previous Group Pictures