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EMN Epitaxy 2019

Welcome to EMN Epitaxy 2019 Amsterdam !

 

           



About Epitaxy 2019

 

To continue its success of last events at Budapest, Hungary (2016), Barcelona, Spain (2017) and Vienna, Austria (2018), the EMN Meeting on Epitaxy 2019 will be held from June 17 to 21, 2019 at Holiday Inn Amsterdam – Arena Towers in Amsterdam, the Netherlands. 

The paramount EMN Epitaxy 2019 will bring an opportunity for leading academic scientists, researchers and decision makers in the field of Epitaxy to get their latest discoveries acknowledged on the global arena, which will include topics of “MBE Molecular Beam Epitaxy“, “MOCVD Metal-organic Chemical Vapor Deposition“, “Atomic Layer Deposition“, “Epitaxial Growth“, “2D Semiconducting Materials“, “Epitaxy Nanomaterials” and other epitaxy related topics.

It will continue for four days will take you to the voyage of knowledge providing you an opportunity to both collaborations and learn about the most recent innovations, trends, and concerns, practical challenges encountered and the solutions adopted in this broad field of epitaxy technology from all over the world, with emphasis on both the basic science as well as its applications in industry and academia. 

The meeting will be a few days of intense collaboration with great social occasions. It will be not only be a time to enjoy the company of fellow researchers in the field, but also a time to have fun with friends and family!

 



 

Speakers at a Glance                              Call for Abstracts

 

Invited  (sort by last name) 

  • Jordi ARBIOL, ICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Catalonia, Spain
    Keynote: Epitaxy at the atomic scale: from core-shell to axial heterojunctions in nanostructures
  • Piotr CABAN, Institute of Electronic Materials Technology, Poland
    Growth of Boron Nitride layers by MOVPE
  • Ayman M. DARWISH, Physics Dvision, National Research Center, Egypt
    To be updated
  • Jan J. DUBOWSKI, Université de Sherbrooke, Canada
    Fabrication of Stoichiometric surfaces of GaAs and AlGaAs
  • Ewa DUMISZEWSKA, Institute of Electronic Materials Technology, Poland
    III-V nanowires grown on various substrates by MOCVD
  • Ali GHAFFARINEJAD, Iran University of Science and Technology (IUST), Iran
    Advanced film deposition techniques employed in Electrostatic Kinetic Energy harvesters (eKEH)
  • Corneliu GHICA, National Institute of Materials Physics, Romania
    Strain driven defects in epitaxial thin films: HRTEM quantification and nanoscale mapping
  • Chirag GUPTA, University of California Santa Barbara, USA
    Expansion of vertical III-Nitrides (GaN) device design space by MOCVD regrowth
  • Masaaki KUZUHARA, University of Fukui, Japan
    To be updated
  • Pintilie LUCIAN, National Institute of Materials Physics, Romania
    New functionalities and findings in epitaxial ferroelectric structures
  • Andrzej PATRYKIEJEW, MCS University Lublin, Poland
    Commensurate and Incommensurate phases in monolayer films
  • Adele SASSELLA, University of Milano Bicocca, Italy
    Organic epitaxy: concepts and examples
  • Dawei SHEN, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
    To be updated
  • Junyou YANG, Huazhong University of Science and Technology, China
    Electrochemical Atomic Layer Deposition of Compound Semiconductors for Photovoltaics
  • Dao Hua ZHANG, Nanyang Technological University, Singapore
    Keynote: Epitaxial antimonides and enhanced photodetection

 

Poster

  • M. BENLATTAR, Hassan II University of Casablanca, Morocco
    Study of upward and downward hetero-diffusions of Au epitaxy on stepped Ag (110) surface

 



 

Meeting Venue & Accommodation

 

Holiday Inn Amsterdam – Arena Towers
Hoogoorddreef 66, 1101 BE Amsterdam The Netherlands
T: +31 (0)20 820 2440
E: info.amsaa@hiex.nl

We strongly encourage you stay at Holiday Inn Amsterdam – Arena Towers, which also serve as the assembly point of our activities.

Transportation:

* Taxi: Departs in front of the airport arrival/departure halls 30 to 40 minutes €50;
* Bus/Shuttle: Not applicable;
* Train: Departs directly from the airport.15 minute direct connection €4,00 per person– strongly recommend

 



 

General Information

 

Registration

The registration and payment gateway shall be available in April, and detailed information can be found by clicking the “Register for Epitaxy” button on the top.

Abstract Submission

Email notification of contributed presentation acceptance is to be provided two months before the meeting, and more details can be found by clicking the “Submit Abstract” button on the top.

The abstract template is available here:  EMN_abstract_template

Please directly submit your abstract as an email attachment to emn-epitaxy@outlook.com

Program at a Glance

On Site Registration Starts: 14:00 PM, June 17, 2019
Scientific Program: June 18/19/20, 2019
One-Day Excursion: Nature, Culture, and Collaboration: June 21, 2019

Main Contact

emn-epitaxy@outlook.com (Holly Wang)

 



 

Previous Group Pictures