emngeneral@outlook.com

EMN Epitaxy 2019

Welcome to EMN Epitaxy 2019 Amsterdam !

 

Download Final Program

 

DESK REGISTRATION TIME:

** Please note the meeting registration desk, located in the hotel, will be open during the following hours:

Monday, June 17 …………………………..…… 14:00pm -17:00pm
Tuesday, June 18 ………………………………… 7:40am -18:00pm
Wednesday, June 19 ………………………….…. 8:00am -18:00pm
Thursday, June 20 ……………………………….. 8:30am -18:00pm

 

GENERAL PROGRAM:

June 17, Monday              Onsite registration from 14:00 to 17:00
June 18, Tuesday             Meeting sessions from 8:10
June 19, Wednesday         Meeting sessions from 8:20
June 20, Thursday            Meeting sessions from 8:45
June 21, Friday                One-Day Excursion: Nature, Culture, and Collaboration

 



About Epitaxy 2019

To continue its success of last events at Budapest, Hungary (2016), Barcelona, Spain (2017) and Vienna, Austria (2018), the EMN Meeting on Epitaxy 2019 will be held from June 17 to 21, 2019 at Holiday Inn Amsterdam – Arena Towers in Amsterdam, the Netherlands. 

The paramount EMN Epitaxy 2019 will bring an opportunity for leading academic scientists, researchers and decision makers in the field of Epitaxy to get their latest discoveries acknowledged on the global arena, which will include topics of MBE, MOCVD, Atomic Layer Deposition, III-V Semiconductors, II-VI IV-VI IV Semiconductors and Oxides, Heterogeneous Epitaxy, 2D Materials, Superconductivity and Topological Insulator Materials, Photodetection and other epitaxy related topics.

It will continue for four days will take you to the voyage of knowledge providing you an opportunity to both collaborations and learn about the most recent innovations, trends, and concerns, practical challenges encountered and the solutions adopted in this broad field of epitaxy technology from all over the world, with emphasis on both the basic science as well as its applications in industry and academia. 

Amsterdam, the capital of the Netherlands, is the country’s largest city and its financial, cultural, and creative center. Amsterdam derives its name from the city’s origin as “Dam” of river “Amstel”, it’s also the site of the present dam square. Amsterdam is colloquially known as Venice of the North because of its lovely canals that criss-cross the city, its impressive architecture and more than 1,500 bridges, there is something for every traveller’s taste here; whether you prefer culture and history, or just the relaxing charm of an old European city. Many famous attraction you can find here as a microcosm of the history of the Netherlands, including the long-standing canal network, the Dutch National Museum, the Van Gogh Museum, Anne’s House, etc. The meeting will be a few days of intense collaboration with great social occasions. 

We are looking forward to having the pleasure welcoming you to the EMN Epitaxy 2019 Amsterdam!



Workshops & Attendees                            

Invited  (sort by workshops)

2D Materials

  • Alicia de Andrés, ICMM-CSIC, Spain
    Graphene Growth on Ruthenium Films: from Epitaxy to Ruthenium Carbide Formation
  • Piotr Caban, Institute of Electronic Materials Technology, Poland
    Growth of Boron Nitride layers by MOVPE
  • Ashish Dabral, IMEC Leuven, Belgium
    Insights in the synthesis of MoS2 using first-principles techniques
  • Maria Kalinina, Institute of Physical Chemistry, Russian Academy of Sciences, Russia
    Layer-by-Layer Assembly of Metal Organic Frameworks on Monolayers of Graphene Oxide
  • Aleksandar Matkovic, Institute of Physics, University of Leoben, Austria
    Van der Waals epitaxy and self-assembly of organic nanostructures on 2D materials
  • Andrzej Patrykiejew, MCS University Lublin, Poland
    Commensurate and Incommensurate phases in monolayer films
  • Luca Persichetti, Università di Roma Tre, Italy
    Metal-free CVD graphene on Ge substrates
  • Yong Zhang, The University of North Carolina at Charlotte, USA
    Growth and characterization of stable ultra-thin Si film on graphene substrate

Heterogeneous Epitaxy

  • Jordi Arbiol, ICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Catalonia, Spain
    Keynote: Epitaxy at the atomic scale: from core-shell to axial heterojunctions in nanostructures
  • Corneliu Ghica, National Institute of Materials Physics, Romania
    Strain driven defects in epitaxial thin films: HRTEM quantification and nanoscale mapping
  • David Halley, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), France
    Appearance of magnetic and magneto-electric properties in highly strained epitaxial clusters of Cr203 and VO2 in a MgO matrix
  • Suseendran Jayachandran, IMEC, Belgium
    Si epitaxy with O inter-layers
  • Parsian K. Mohseni, Rochester Institute of Technology, USA
    Selective-area growth of III-V nanowires on two-dimensional MoS2 in the pseudo-van der Waals epitaxy regime
  • Peter B. Mozhaev, Institute of Physics and Technology, Russian Academy of Sciences, Russia
    Graphoepitaxy in metal-oxide heterostructures: 3D film-substrate matching
  • Henry Homayoun Radamson, Institute of Microelectronics, Chinese Academy of Sciences, China
    GeSn growth and application
  • Kentarou Sawano, Tokyo City University, Japan
    Si/Ge heterostructures with various surface orientations
  • Praveen K. Saxena, Tech Next Lab Pvt Ltd (TNL), India
    Innovative Atomistic Approach to handle homo/hetero epitaxial growth through New Era TNL’s EpiGrow Simulator
  • Patrick Vogt, Helmholtz-Zentrum Berlin, Germany
    Metal-oxide catalyzed epitaxy (MOCATAXY): A novel path towards high-quality binary and ternary III-O heterostructures
  • Guilei Wang, Institute of Microelectronics, Chinese Academy of Sciences, China
    Advanced Ge devices and application
  • Jennifer Wong-Leung, The Australian National University, Australia
    III-V Semiconductor Nanowire Heterostructures grown by metal organic chemical vapour deposition

III-V Semiconductors, MOCVD, MBE

  • Kouichi Akahane, National Institute of Information and Communications Technology, Japan
    Hybrid structure of quantum-dot and quantum-well superlattice grown by molecular beam epitaxy
  • Saud Bin Anooz, Leibniz Institute for Crystal Growth (IKZ), Germany
    High-quality, homoepitaxial β-Ga2O3 (100) grown by MOVPE
  • Ezekiel A. Anyebe, Lancaster University, UK
    MBE Growth of InAsSb Nanowires on Graphite for Flexible Optoelectronic Devices
  • Masakazu Arai, University of Miyazaki, Japan
    Optimization of gas flow sequence for mid-infrared range Sb-based superlattice using MOCVD
  • Mikhail Chernov, Laboratory of Quantum-size Heterostructures, Ioffe Institute, Russia
    Metamorphic InAs(Sb)/In(Ga,Al)As heterostructures grown by MBE on GaAs: toward mid-IR lasing
  • Ewa Dumiszewska, Institute of Electronic Materials Technology, Poland
    III-V nanowires grown on various substrates by MOCVD
  • John Farah, OptiCOMP Networks, USA
    Epitaxial lift-off GaAs substrate
  • Iulian Gherasoiu, SUNY Polytechnic University, USA
    Epitaxial Growth of novel III-Nitride Metastable Alloys
  • Kacper Grodecki, Military University of Technology, Poland
    Optical characterization of InAsSb including Raman, photoluminescence and absorption techniques
  • Evelyne Gil, Institut Pascal, UCA/CNRS/SIGMA Clermont, Université Clermont Auvergne, France
    Shaping 3D (nano)structures: back to basics of crystallogenesis – Strengths and weaknesses of CVD/VPE and MBE
  • Alexander S. Gouralnik, Institute of Automation and Control Processes FEB RAS, Russia
    Growth of the best crystal quality thin Mg2Si films on silicon surfaces by ultra-fast deposition at high T
  • Chirag Gupta, University of California Santa Barbara, USA
    Expansion of vertical III-Nitrides (GaN) device design space by MOCVD regrowth
  • Soon-Ku Hong, Chungnam National University, Korea
    Growth and Characterization of Ultra-Wide Bandgap Gallium Oxide for Power Semiconductors by MBE
  • Masaaki Imamura, Fukuoka Institute of Technology, Japan
    Magneto-optical Properties of Wider Gap Magnetic Semiconductor ZnMnTe and ZnMnSe Films Prepared by MBE
  • Masanori Nagase, AIST, Japan
    New Nonvolatile Memory Using GaN-based Resonant Tunneling Diodes
  • Vladimir Matias, iBeam Materials, Inc., USA
    Growing LEDs on metal foils
  • Ayad Fadhil Omar, University of Malaya, Malaysia
    Crystal Quality Enhancement of Semi-Polar (11-22) InGaN/GaN-based LED Grown on M-Plane Sapphire Substrate via MOCVD
  • Mariusz Rudziński, Institute of Electronic Materials Technology, Poland
    3D hexagonal micro-columns based on III-N grown by MOCVD
  • Patrik Scajev, Vilnius University, Lithuania
    MOCVD growth of InGaN structures on different substrates
  • Koichiro Ueno, ASAHI KASEI MICRODEVICES CORPORATION, Japan
    Mid-infrared sensor using MBE-grown Sb-based compound semiconductor
  • Masanobu Yoshikawa, Toray Research Center Inc., Japan
    Defect characterization of GaN by SEM-CL and STEM-CL
  • Hong-Liang Zhang, Xiamen University, China
    The growth and electronic structures of p-type wide bandgap oxide semiconductors
  • Songrui Zhao, McGill University, Canada
    Molecular Beam Epitaxy of III-nitride Nanostructures: Opportunities for Semiconductor Deep Ultraviolet Photonic Devices and Beyond

Photodetection

  • Takashi Kondo, The University of Tokyo, Japan
    Epitaxy of Lead Halide Perovskites
  • Fedir F. Sizov, V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Ukraine
    Narrow-gap semiconductors for IR and THz detection
  • Maksim Yakushev, Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Russia
    Molecular beam epitaxy of HgCdTe layers on alternative substrates for infrared photodetectors
  • Junyou Yang, Huazhong University of Science and Technology, China
    Electrochemical Atomic Layer Deposition of Compound Semiconductors for Photovoltaics
  • Dao Hua Zhang, Nanyang Technological University, Singapore
    Keynote: Epitaxial antimonides and enhanced photodetection
  • Emil Zolotoyabko, Technion-Israel Institute of Technology, Israel
    Atomic intermixing in short-period superlattices for infrared detection

Superconductivity and Topological Insulator Materials

  • Georgia Andra Boni, National Institute of Materials Physics, Romania
    New functionalities and findings in epitaxial ferroelectric structures
  • Sergio Morelhao, University of Sao Paulo, Brazil
    Dynamic of defects in van der Waals epitaxial of bismuth telluride topological insulator correlated to structural and electronic properties
  • Masahiro Naritsuka, Kyoto University, Japan
    Heavy-fermion superconducting superlattices grown by MBE

Epitaxy General

  • Yasuto Hijikata, Saitama University, Japan
    Structure identification and characterization of the single-photon sources formed on the surface of silicon carbide crystals
  • Masayoshi Ichimiya, The University of Shiga Prefecture, Japan
    Ultrafast optical response due to radiative coupling of multicomponent excitons in ZnO thin films
  • Masaaki Kuzuhara, University of Fukui, Japan
    Vertical GaN MOSFETs with a regrown AlGaN barrier layer
  • Adele Sassella, University of Milano Bicocca, Italy
    Organic epitaxy: concepts and examples
  • Ryohei Tsuruta, Tokyo University of Science, Japan
    Heteroepitaxial growth of organic pn junction on organic single crystals
  • Yongbing Xu, The University of York, UK; Nanjing University, China
    Keynote: Hybrid heterostructures for the next generation spintronics
  • Shouke Yan, Beijing University of Chemical Technology, China
    Epitaxial Effect in Polymer Crystallization
  • Lixin Zhang, Nankai University, China
    Defect Control in Epitaxy: First-Principles Calculations


Abstract Submission

Abstract deadline is April 30, 2019. Email notification of contributed presentation acceptance will be provided no later than May 5, 2019.

 EMN_abstract_template

Please directly submit your abstract as an email attachment to emn-epitaxy@outlook.com

  • Please underline the name of the presenting author.
  • Please limit abstracts to a single page.
  • Select Invited, Oral or Poster presentation preferred as prompted in the template.
  • Indicate preferred workshop where prompted from the options in the list of workshops.
  • Abstracts with figures are encouraged.
  • Abstracts may be submitted ONLY as Microsoft Word files. Please name your file according to the following convention prior to submission: First Name_Last Name_EMN Epitaxy_ Abstract.doc

 



Registration

All participants including conference chairs and invited speakers need to register, please pay registration fees according to the following schedule: 

  

* Please click the left “Register for Epitaxy” button above and finish your registration and payment.  

(registration fee will not cover flights or accommodation)

  • The registration fees are refundable less a ten percent (10%) processing charge if notice of cancellation is received 30 days before the meeting;
  • The registration fees are refundable less a twenty percent (20%) processing charge if notice of cancellation is received 15 days before the meeting;
  • Registration fees cannot be refunded if notice of cancellation is received within 15 days before the meeting;
  • On-site registration payments are acceptable in Cash Only.

Attention: All lunch, Dinner, social events tickets are non-transferable and non-transferable and non-changeable. There are separated charges for each activity if you bring any additional member.

* Temporary Meeting Agenda

  • On Site Registration Starts: 14:00 PM, June 17, 2019
  • Scientific Program: June 18/19/20, 2019
  • One-Day Excursion: Nature, Culture, and Collaboration: June 21, 2019

 



Meeting Venue & Accommodation

Holiday Inn Amsterdam – Arena Towers
Hoogoorddreef 66, 1101 BE Amsterdam The Netherlands
T: +31 (0)20 820 2440
E: info.amsaa@hiex.nl

We strongly encourage you stay at Holiday Inn Amsterdam – Arena Towers, which also serve as the assembly point of our activities.

Transportation:

* Taxi: Departs in front of the airport arrival/departure halls 30 to 40 minutes €50;
* Bus/Shuttle: Not applicable;
* Train: Departs directly from the airport.15 minute direct connection €4,00 per person– strongly recommend

 



Previous Group Pictures