Welcome to EMN Barcelona Meeting on Semiconductor 2019 !

August 19-23, Barcelona, Spain

Please click to find the final program of The 2019 EMN Barcelona Meeting on Semiconductor:



* Please click the “Register for Semiconductor” button above to finish your registration and payment. 

If you have met any problem or needs and assistance, please contact us at emn-meetings@hotmail.com

Registration and abstract submission details updated at the bottom of this page.



Oxide Semiconductors

Organic Semiconductors

Perovskite Semiconductors

Silicon-Based Semiconductors

Compound Semiconductors

Low-Dimensional Semiconductors

Physics of Semiconductors

Semiconductor Surfaces and Interfaces

Semiconductor Devices and Methods

Semiconductors for Flexible Electronics

Novel Semiconductor Devices and Applications

Semiconductor General

Keynote Talk:

  • Soon-Gil Yoon, Chungnam National University, Korea

    Unexpected predominant electrical performance of N-doped graphene thin film transistors (TFTs) based on the transfer-free, large-scale, high quality monolayer graphene synthesized below 150 oC

Invited Speakers:

  • Pedro Hidalgo Alcalde, UCM-Universidad Complutense de Madrid, Spain

    Zn2GeO4, a novel wide band gap semiconductor for application in the UV range and for energy storage

  • Mara Bruzzi, Università degli Studi di Firenze, Italy

    Electrically active defects in Lead Halide Perovskite CsPbBr3

  • Amit Bhunia, Indian Institute of Science Education and Research, India

    Quantum oscillations under photoexcitation involve direct and indirect excitons and quantum capacitance

  • Kao-Shuo Chang, National Cheng Kung University, Taiwan

    Combinatorial Sputtering of Piezoelectric Nitride Thin Films and Their Advanced Applications

  • Gang Chen, Shanghai Institute of Technical Physics, CAS, China

    Towards Sensitive Terahertz Detection via Thermoelectric Manipulation in Graphene Transistors

  • Hassan Denawi, Aix-Marseille Université, France

    Electronic Structure and Magnetic Moment of Polymer Based on FeZwitterionic Quinone and the Adsorbed Polymer on Different Metallic Substrates

  • Michel Dyakonov, University of Montpellier, France
    Spin Hall Effect
  • Eduardo F. Fernández, University of Jaén, Spain

    High-efficiency vertical solar cell structures for ultra-high CPV applications

  • Andrew Findlay, SEMILAB, USA

    Present Status of Corona-charge Noncontact C-V (CnCV) Metrology for Wide Bandgap Semiconductor Technology

  • Zhan Gao, University of Padova, Italy

    Electrical stability study of AlGaN/GaN RF HEMTs with C doping

  • Weiguo Hu, Beijing Institute of Nanoenergy and Nanosystems, CAS, China

    GaN Piezo-phototronic devices

  • Pedram Jahandar, University of Warwick, UK

    Using machine learning to optimise CVD conditions to grow GeSn via Ge buffer on Si(001)

  • Vaidotas Kažukauskas, Vilnius University, Lithuania

    Commercial Activities in the Field of Organic Photovoltaics and Underlaying Fundamental Physical Phenomena of Charge Transport

  • Eun Kyu Kim, Hanyang University, Korea

    Carrier transport of thin film transistor with Nb-doped WSe2 channel

  • Jacek J. Kolodziej, Uniwersytet Jagiellonski, Poland

    Skin effect in band structure formation for two dimensional electron gases at semiconductor surfaces

  • Stanislav Kruchinin, University of Vienna, Austria

    The mechanisms of large Stokes shifts in ternary I-III-VI quantum dots

  • Vipul Kheraj, S. V. National Institute of Technology (SVNIT), Inida

    Degradation Pathways for Perovskite Thin-Films

  • Saida Latreche, University Frères Mentouri Constantine, Algeria
  • Kwang-Sup Lee, Hannam University, Korea

    Energy and Charge Transfer Effects for Hybrids of Quantum Dots on Semiconducting Materials

  • Lu Li, University of Michigan, USA

    Quantum Oscillations in Kondo Insulators

  • Shengzhong (Frank) Liu, Shaanxi Normal University, China

    Surface Modification and Additive Engineering for Record High Efficiency Flexible Perovskite Solar Cells

  • Oleg A. Louchev, Center for Advanced Photonics, RIKEN, Japan

    Laser-matter interaction: Kinetics of energy transfer in semiconductors and dielectrics

  • Bruno Masenelli, Institut National des Sciences Appliquées de Lyon, France

    Metallic ZnO nanocrystlas for Mid IR plasmonics

  • Yuji Miyahara, Tokyo Medical and Dental University, Japan

    Detection of biomolecular recognition and cell function using bio-transistors

  • Ranim Mohamad, University of Caen Normandy, France

    Influence of crystalline defects on the properties of InAlN/GaN heterostructures and their spontaneous degradation

  • Tahir Muhmood, Shanghai JiaoTong University, China

    Spherical graphitic carbon nitride Nano-composite with Ag2ZrO3 for photodegradation of herbicide MTSM

  • Muhammad Nawaz, ABB Corporate Research, Sweden

    Wideband semiconductors, Opportunities and Challenges

  • Jun Ni, Tsinghua University, China

    Electronic and transport properties of 2D MX2 and boron based materials

  • Bushra Parveen, University of the Punjab, Pakistan

    Effect of Zr doping on physical properties of SnO2 semiconducting nanoparticles for spintronic device application

  • Luca Persichetti, Roma Tre University, Italy

    Towards a Silicon-based Quantum Cascade Laser

  • Jorge Quereda Bernabeu, University of Groningen, Holland

    Nonlinear optoelectronics and anomalous photovoltaic effects in monolayer MoSe2 crystals

  • František Schauer, Tomas Bata University in Zlín, Czech Republic

    Electrochemical Impedance Spectroscopy for Study of Electronic Structure and Properties of Organic Bulk and Donor – Acceptor Heterojunction Interfaces

  • Qijun Sun, Beijing Institute of Nanoenergy and Nanosystems, CAS, China

    Piezo/triboelectric potential modualated semiconductor devices

  • Koukou Suu, ULVAC, Inc., Japan

    Manufacturing technology of emerging semiconductor memories for Smart Societ

  • Miyuki Tabata, Tokyo Medical and Dental University, Japan

    Electrical/Electrochemical detection of small nucleic acids for liquid biopsy

  • Yuya Tanaka, Chiba University, Japan

    Displacement current measurement using a combined waveform for organic devices

  • Yuri Uhryn, Ivan Franko Pedagogical University, Ukraine

    Method of Minority Charge Carriers Parameters Calculation by Magnetoresistance Investigation

  • Lin Wang, Shanghai Institute of Technical Physics, CAS, China

    Terahertz Near-field Tailoring Photoelectric Effect in Graphene-based Transistor

  • Arkady Yartsev, Lund University, Sweden

    Charge recombination dynamics in III-V semiconductor nanowires

  • Takeshi Yanagida, Kyushu University, Japan
  • Aijun Yang, Xi’an Jiaotong University, China
  • Jianhong Yang, Lanzhou University, China

    Renovated p-n Junction Theory: A Principle Description

  • Hong Yin, Jilin University, China
  • Masanobu Yoshikawa, Toray Research Center, Inc., Japan

    Defect characterization of GaN by SEM-CL and STEM-CL

  • Fei Zeng, Tsinghua University, China

    Adaptive Modulation of Interfacial Kinetics between Homogenous Bilayer Oxide Memristor for Emulating Learning Protocols

  • Junyi Zhai, Beijing Institute of Nanoenergy and Nanosystems, CAS, China

    Piezotronic materials and applications

  • Baoping Zhang, Xiamen University, China

    Fabrication of GaN green VCSELs

  • Yue Zhang, Catalan Institute of Nanoscience and Nanotechnology(ICN2), Spain

    Photoeletrochemical excitation of cells with arrays of silicon nanodiodes

  • Shengjun Zhou, Wuhan University, China

    Highly efficient GaN-based blue/green/ultraviolet light-emitting diodes


  • YoungSeung Cho, Semiconductor Research Center, Samsung Electronics Co., South Korea

    Suppression of the Floating-Body Effect of Vertical-Cell DRAM with tunneling diode

  • Hakima Hedjar, Abdelhamid Ibn Badis University-Mostaganem, Algeria

    Structural, magnetic and optoelectronic properties of Mn and Gd doped zinc blende CdS.first principle investigation

  • Soon-Won Jung, Techplus, Korea

    Characteristics of Titanium Oxide Thin Films grown by Chemical Vapor Deposition Method with Large Surface Area

  • Abdenour Lami, Centre de Recherche en Technologie des Semiconducteurs pour l’Energétique CRTSE, Algeria

    Effect Of The Crucible-Coating-Silicon Feedstock System Purity On Electrical Properties Of Directionally Solidified HEM Multicrystalline Silicon Ingot

  • Yan Li, Northwest Normal University, China

    High efficient photocatalytic activity of photonic crystal structural-induced Cu3SnS4/Ti3+-TiO2 p-n coaxial heterojunction arrays for pollutant degradation and H2 production

  • Aissa kefaifi, Centre de Recherche en Technologie des Semiconducteurs pour l’Energétique CRTSE, Algeria

    Modeling of quartz bursting test at high temperature

Call for abstracts

The conference organizing committee sincerely welcome the potential speakers to contribute a more exciting meeting.

Abstract submission deadline:  June 30, 2019.

Please click here to find the  Abstract template Please submit it as an email attachment to emn-meetings@hotmailcom. Abstracts accepted for the Conference will be presented either orally or as a poster.

Oral Presentations

Contributed talks: Authors of contributed talks will be allotted 12 minutes to present their results, followed by a 3 minute discussion period.

Invited talks: Authors of invited talks will be allotted 20 minutes to present their results, followed by a 5 minute discussion period.

Poster Presentations: The poster size can be 90cm x 140cm.

Registration The registration and payment gateway shall be available in April, and detailed information can be found here.

Before July 10, 2019
Before July 10, 2019
July 10-July 15, 2019
July 10-July 15, 2019
Without Presentation
Before Aug 19, 2019
Accompany person
(without Scientific Program)
Before Aug 19, 2019
On-Site (Cash Only)
Aug 19-21, 2019
Please Note:
  • The registration fees are refundable less a ten percent (10%) processing charge if notice of cancellation is received 30 days before the meeting;
  • The registration fees are refundable less a twenty percent (20%) processing charge if notice of cancellation is received 15 days before the meeting;
  • Registration fees cannot be refunded if notice of cancellation is received within 15 days before the meeting;
  • On-site registration payments are acceptable in Cash Only.

Attention: All lunch, Dinner, social events tickets are non-transferable and non-transferable and non-changeable. There are separated charges for each activity if you bring any additional member.

The meeting schedule

On Site Registration Starts: 14:00 PM, Aug. 19, 2019

Scientific Program: Aug. 20/21/22, 2019

One-Day exchanging and collaborating: Aug. 23, 2019

Meeting Venue & Accommodation

Hotel Campus Edifici Blanc – Campus UAB

Bellaterra, Cerdanyola, Barcelona 08193

Phone: +34935808353

Web: https://www.hotelcampusuab.com/

The conference will be held at Hotel Campus, which will serve as the main accommodation venue for the attendees.  We have blocked off some rooms with discount rate for the EMN attendees during the meeting dates. Please fill the Reservation Form as below to book and confirm your stays.

Daily Room Rate: 

      • From Aug 19th to 21th(NIGHTS 19-20-21)
        Single use room 106,00€/night
        Double/twin(2 people 1 Participant + 1 Partner) use room is 116,00€/night
        Double/twin(2 people Participants meeting) use room is 160,00€/night

Participant: The above-mentioned rates are valid per room per night, including Buffet Breakfast, Conference room, Morning coffee break, Lunch, Afternoon coffee break.
Partner: including Bed& breakfast
The above-mentioned rates include IVA taxes. Tourist tax not included.

      • From Aug 22th or Previous days
        Single use room 79,00€/night
        Double/twin use room is 88,00€/night

* Breakfast & IVA taxes included. Tourist tax not included.


Please fill the Reservation form-Barcelona of the hotel to book and confirm your stays with this discount rate. Please send this form DIRECTLY to the Hotel Campus by Email or Fax to EVA LLORENTE reservas@hotelexecampus.com, and CC to Conference Assistant

How to arrive the conference hotel from airport:

1.Taxi: around 35 mins to get here. About 50 euros.

2.Bus & Train: Aeroport – “Terminal C” A2 Pl. Catalunya – Fontanella, 40mins, 4 stops. S2 Catalunya-Bellaterra, 34mins, 16 stops.