Invited Speakers


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  • EMN Epitaxy on ALD
  • EMN Epitaxy on 2D Semiconducting Materials
  • EMN Epitaxy on MBE                                                                 
  • EMN Epitaxy on MOCVD (Basic MOCVD research and Devices grown by MOCVD)   
  • EMN Epitaxy on Nanomaterials
  • EMN General Workshop on Epitaxy                                          

SPEAKERS AT A GLANCE                                                    laba  EMN EPITAXY CALL FOR ABSTRACTS (Flyer) 12

Keynote Address:

  • Colin Humphreys, University of Cambridge, UK
    MOCVD epitaxial growth of GaN on large-area silicon: from basic research to devices (“MOCVD” workshop)
  • Mehdi Anwar, University of Connecticut, USA
    Memristors: Physics, Materials and Systems

Invited Speakers

  • Akhil Ajay, CEA Grenoble, France
    GaN nanowires for intersubband optoelectronics (“MBE” workshop)
  • Martin Albrecht, Leibniz Institute for Crystal Growth, Germany
    Epitaxial growth of short period III-Nitride superlattices
  • M. Isabel Alonso, ICMAB-CSIC, Spain
    MBE growth and properties of in-plane SiGe nanowires on Si(001) (“MBE” workshop)
  • Yamina Andre, Université Clermont Auvergne, CNRS, France
    Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon (“Epitaxy General” workshop)
  • Stephane Andrieu, Lorraine University, CNRS, France
    Half Metal Magnetic Heusler alloys grown by molecular beam epitaxy : impact in spintronics
  • Masaaki Ashida, Osaka University, Japan
    Fabrication of I-VII semiconductor thin films using novel MBE with electron beam irradiation and their assessment by cathodoluminescence (“MBE” workshop)
  • Naoufal Bahlawane, Luxembourg Institute of Science and Technology LIST, Luxembourg
    Responsive vanadium oxide thin films, growth, characterization and implementation (“MOCVD” workshop)
  • Christopher Bailey, Assistant Professor, Old Dominion University, USA
    To be announced (“Epitaxy General” workshop)
  • John D. Baniecki, Fujitsu Laboratories, Japan
    In situ photoemission and spectroscopic ellipsometry study of the band alignment and electronic structure of epitaxially strained d and s band composite oxide nanostructures
  • Antoine Barbier, CEA/Saclay, DRF/IRAMIS/SPEC/LNO, CNRS, France 
    Epitaxial strain engineering in Atomic Oxygen plasma assisted MBE grown artificial multiferroic biphase oxide layers (“MBE” workshop)
  • Isabelle Berbezier, IM2NP, CNRS, France
    Core-shell Si/Ge nanostructures: a new paradigm
  • Yury Berdnikov, St. Petersburg Academic University, Russia
    Strategies for narrowing length and radius distributions of nanowires (“Epitaxy General” workshop)
  • Djalal Benyahia, Military University of Technology, Poland
    Investigation of the Interfacial Misfit Array Growth Mode of GaSb Layers on GaAs Substrate by Molecular Beam Epitaxy (“MBE” workshop)
  • Alexander Berg, Lund University, Sweden/AZUR SPACE Solar Power GmbH, Germany
    III-V nanowire growth for core-shell (Al)GaInP light-emitting diodes (“MOCVD” workshop)
  • Adrien Carretero-Genevrier, CNRS/Université Montpellier, France
    Chemical solution routes for the direct nanostructuration of epitaxial functional oxides thin films on silicon (“Epitaxy General” workshop)
  • Stefanos Chaitoglou, Universitat de Barcelona, Spain
    Preparation of Graphene hybrid electrodes for supercapacitor applications
  • Subhananda Chakrabarti, Indian Institute of Technology Bombay, India
    Molecular Beam Epitaxy of Strain-coupled In(Ga)As/GaAs quantum dots (“MBE” workshop)
  • Deyang Chen, South China Normal University, China
    New insights of depolarization field in ferroelectric thin films
  • Taek-Mo Chung, Korea Research Institute of Chemical Technology, Korea
    Development and Application of Novel Precursors for High Mobility Transparent Conducting Oxide (TCO)
  • George Cirlin, Institute for Analytical Instrumentation RAS, Russia
    MBE growth and properties of A3B5 nanowires on silicon (“MBE” workshop)
  • Yvon Cordier, CRHEA-CNRS, France
    Growth temperature: a critical parameter for III-Nitride electron devices on Silicon (“MOCVD” workshop)
  • Pierre-Marie Coulon, University of Bath, UK
    Combining top-down etching and MOCVD regrowth: an hybrid approach to nano-engineer III-Nitrides for visible and deep-UV light-emitting devices (“MOCVD” workshop)
  • Grzegorz Cywinski, Institute of High Pressure Physics, Polish Academy of Sciences, Poland
    Epitaxy of GaN/AlGaN 2DEG heterostructures for lateral Schottky diodes. Towards high frequency devices.
  • Wael M. Darwish, National Research Centre, Egypt
    Photodynamic and Photothermal Therapy of Cancer using Photosensitizers and Gold Nanoparticles
  • Joel Díaz-Reyes, CIBA-IPN, México
    Characterization of Cd1-xZnxTe (0≤x≤1) nanolayers grown by atomic layer deposition on GaSb and GaAs (001) oriented substrates
  • Kadir Ejderha, Bingol University, Turkey
    Organic interfacial layered bulk silicon solar cells
  • Sonia Estrade, Universitat de Barcelona, Spain
    Advanced (S)TEM – EELS characterization of functional oxides (“Epitaxy General” workshop)
  • Juan Feliu, Universidad de Alicante, Spain
    Electrochemical characterization of epitaxially grown metallic adlayers (“Epitaxy General” workshop)
  • Iulian Gherasoiu, SUNY Polytechnic Institute, USA
    To be announced (“MBE” workshop)
  • Hubert Głowiński, Institute of Molecular Physics, Polish Academy of Sciences, Poland
    Epitaxial yttrium iron garnet thin films for spin wave spectroscopy (“Epitaxy Nanomaterials/MOCVD” workshop)
  • Noelle Gogneau, Université Paris-Saclay, CNRS-C2N, France 
    Growth of high-quality InGaN/GaN nanowires for nano-energy applications
  • Daniel Guay, INRS Énergie Matériaux Télécommunication, Canada
    On the Use of Epitaxial Thin Films in Electrocatalysis (“Epitaxy General” workshop)
  • Wei Guo, University of Massachusetts Lowell, USA
    To be announced (“MBE” workshop)
  • Sofiane Haffouz, National Research Council Canada, Canada
    Selective-area VLS of single InAs quantum dots in Wurtzite InP nanowires (“Epitaxy Nanomaterials/MOCVD” workshop)
  • Ken Hattori, Nara Institute of Science and Technology, Japan
    Epitaxial growth of beta-FeSi2(100) nano-carpet on Si(001) substrate
  • Tohru Higuchi, Tokyo University of Science, Japan
    Growth of Vanadium Oxide Thin Film by RF Magnetron Sputtering Using Oxygen Radical (“Epitaxy Nanomaterials” workshop)
  • Isom Hilmi, Leibniz-Institut für Oberflächenmodifizierung (IOM), Germany
    Epitaxy of Chalcogenide GeTe-Sb2Te3 Thin Films and Superlattice Structures by Pulsed Laser Deposition (“Epitaxy Nanomaterials” workshop)
  • Masayoshi Ichimiya, The University of Shiga Prefecture, Japan
    Fabrication of I-VII semiconductor thin films using novel MBE with electron beam irradiation and their assessment by cathodoluminescence (“MBE” workshop)
  • Mitsuru Itoh, Tokyo Institute of Technology, Japan
    Exploration of metastable phase chemistry in ABO3 oxides by PLD (“Epitaxy General” workshop)
  • Azadeh Jafari, Islamic Azad University, Iran
    Interaction between plasma and tungsten carbide thin films coated on Tokamak first wall
  • Joris Keizer, University of New South Wales, Australia
    Atomic precise device fabrication in Si:P (“MBE/2D Semiconducting Materials” workshop)
  • TaeWan Kim, Korea Research Institute of Standards and Science KRISS, Korea
    Wafer-scale production of highly uniform 2D TMDs by metal-organic chemical vapor deposition (MOCVD) (“MOCVD” workshop)
  • Yunsoo Kim, Korea University, Korea
    Epitaxy of NiO Thin Films on the MgO(001) Substrate by MOCVD (“MOCVD” workshop)
  • Mitsuo Koizumi, Japan Atomic Energy Agency, Japan
    Dynamic nuclear self-polarization of III-V semiconductors
  • Masahiko Kondow, Osaka University, Japan
    Photonic crystal laser with quantum dots as active material grown by MBE (“MBE” workshop)
  • Jens Kreisel, Luxembourg Institute of Science and Technology LIST, Luxembourg
    Strain & phase transitions in epitaxial oxide heterostructures and ultrathin films
  • Franciszek Krok, Jagiellonian University, Poland
    Self-organization processes of thin metal layers on reconstructed surfaces of semiconductor crystals
  • Vlado Lazarov, University of York, UK
    Van der Waals epitaxy between 2D materials and Topological Insulators
  • Yong-Tak Lee, Gwangju Institute of Science and Technology GIST, Korea
    PA-MBE grown III-nitride nanowire arrays and its optoelectronic device applications (“MBE” workshop)
  • Ray-Ming Lin, Chang Gung University, Taiwan
    To be announced
  • Zhiqi Liu, Beihang University, China
    Epitaxial growth of magnetic intermetallic alloys on functional oxides for multiferroic device applications
  • Xucun Ma, Tsinghua University, China
    Epitaxial thin films for high temperature superconductivity
  • Rita Magri, Università degli Studi di Modena e Reggio Emilia, Italy
    Multiscale approaches to modeling molecular beam epitaxy growth (“MBE” workshop)
  • Iulian Gherasoiu, SUNY Polytechnic University, USA
    Mg incorporation in InGaN alloys – SIMS and TEM investigation (“MBE” workshop)
  • Pierre Giovanni Mani González, Universidad Autónoma de Ciudad Juárez, México
    Effect of aperture time, number of cycles and time of coverage: Atomic Layer deposition analysis and characterization
  • Ignasi Fina Martínez, ICMAB-CSIC, Spain
    Photoelectric effects in ferroelectric thin films
  • Partha Mukhopadhyay, University of Central Florida, USA
    Epitaxial Growth of Wide Bandgap Oxide Semiconductor for UV Photodetector (“MBE” workshop)
  • Maciej Matys, Hokkaido University, Japan
    Mechanism of yellow luminescence in GaN layers (“MOCVD” workshop)
  • Tetsuo Narita, Toyota Central R&D Labs., Inc., Japan
    MOVPE growth technology for GaN-based power devices (“MOCVD” workshop)
  • Akos Nemcsics, Obuda University, Hungary
    Some aspects to the droplet epitaxially nano structure growth
  • Takao Oto, Sophia University, Japan
    Structural and optical properties in InGaN/GaN nanocolumns fabricated by selective-area growth (“Epitaxy Nanomaterials” workshop)
  • Hyung-Ho Park, Yonsei University, Korea
    To be announced (“ALD” workshop)
  • Andrea Picone, Polytechnic University of Milan, Italy
    Epitaxial growth of nano-oxides on graphene: towards the synthesis of new 2D layered systems
  • Ewa Przeździecka, Institute of Physics, Polish Academy of Sciences, Poland
    Polar and non-polar ZnO MBE layers doped with V-group (“MBE” workshop)
  • Madhav Ranganathan, Indian Institute of Technology, Kanpur, India
    kMC simulations of Ge on Si(001) (“MBE” workshop)
  • Anna Reszka, Institute of Physics, Polish Academy of Sciences, Poland
    Nanoscale characterization of (Al,Ga)N/GaN nanowire LEDs grown by PAMBE (“MBE” workshop)
  • Dmitry Rogilo, Rzhanov Institute of Semiconductor Physics SB RAS, Russia
    2D nucleation and transition to multilayer growth during Si/Si(111) epitaxy (“MBE” workshop)
  • Iman S. Roqan, King Abdullah University of Science and Technology, Saudia Arabia
    High brightness Blue-Light-Emitting Diode based on high optical and structural quality Gd doped ZnO-nanotube array grown on p-GaN (“Epitaxy Nanomaterials” workshop)
  • Juan Rubio-Zuazo, BM25-SpLine at the ESRF, France/Instituto de Ciencia de Materiales de Madrid-CSIC, Spain
    Interface role on the magnetic and electric dead layer on La0.7Ca0.3MnO3 epitaxial thin films (“Epitaxy General” workshop)
  • Mariusz Rudziński, Institute of Electronic Materials Technology, Poland
    III-N micro columns for UV-LEDs by MOCVD (“MOCVD” workshop)
  • Tony SpringThorpe, National Research Council of Canada, Canada
    Planar Avalanche Photodiodes: Edge breakdown suppression employing selective area epitaxy prior to Zn diffusion (“MOCVD” workshop)
  • Meziani Samir, CRTSE, Algerie
    PECVD growth methods of SiNx for solar cells application
  • Kentarou Sawano, Tokyo City University, Japan
    Controlled doping for Ge based optoelectronic devices (“MBE” workshop)
  • Dawei Shen, Shanghai Institute of Microsystem And Information Technology, CAS, China
    Manipulating the electronic structure and magnetism of oxide spin-orbit Mott insulator by tailoring superlattices
  • Nickolay Sibirev, Russian Academy of Sciences, St. Petersburg, Russia
    Insights into the axial heterostructure formation in ternary nanowires through a kinetic driven nucleation theory
  • Masato Sone, Tokyo Institute of Technology, Japan
    Abnormal large single crystalline grains epitaxially grown in electrodeposition (“Epitaxy General” workshop)
  • Vladimir N. Strocov, Paul Scherrer Institute, Switzerland
    K-space imaging of electrons in buried heterostructure and impurity systems using soft-X-ray ARPES
  • Longxing Su, Fudan University, China
    Structure and optical properties of quarternary alloy BeMgZnO films growth by molecular beam epitaxy (“MBE” workshop)
  • Munetaka Taguchi, Nara Institute of Science and Technology, Japan
    Electronic structure study of Magnetite (Fe3O4) for thin films and bulk crystal by hard x-ray photoemission spectroscopy
  • Vyacheslav Timofeev, Rzhanov Institute of Semiconductor Physics SB RAS, Russia
    Effect of strains on morphology, structure and optical properties of Ge-Si-Sn group IV materials (“MBE” workshop)
  • Takahiro Tsukamoto, Tokyo University of Agriculture and Technology, Japan
    Epitaxial growth of GeSn and GeSiSn by sputter epitaxy method (“Epitaxy General” workshop)
  • Victor Ustinov, Russian Academy of Sciences, St. Petersburg, Russia
    MBE growth of heterostructures for high-speed optoelectronic devices (“MBE” workshop)
  • V.D. Vankar, Indian Institute of Technology Delhi, India
    High Rate Epitaxial groth of Diamond
  • Anna Wolska, Institute of Physics, Polish Academy of Sciences, Poland
    Characterization of the epitaxially grown layers using X-ray absorption spectroscopy
  • Xiangfan Xu, Tongji University, China
    Thermal transport in 2D van der waals structures (“2D semiconducting Materials” workshop)
  • Xin Yao, Shanghai Jiao Tong University, China
    Artificial microstructures in oriented YBa2Cu3O7-δ LPE films achieved by fine-tuning supersaturation
  • Arata Yasuda, National Institute Technology, Tsuruoka College, Japan
    YBa2Cu3O7-δ superconductor films grown with spin coat method using hazard-free solution